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Samsung’s first generation 3nm chip goes into production



Samsung’s first generation 3nm chip goes into production


Samsung Foundry or the foundries of the South Korean manufacturer have announced the start of mass production of the first generation 3nm chip.

The chips are based on the new one GAA transistor architecture (Gate-All-Around), which represents the evolution compared to the FinFET technology used to date. Compared to 5nm chips, the first generation 3nm Samsung chips will be able to provide up to 23% better performance, up to 45% lower power consumption and 16% surface area reduction.

Samsung’s move anticipates that of the TSMCwhich is expected to begin mass production of 3nm chips in the second half of the year.

The special Gate-All-Around (GAA) design will allow Samsung to reduce the number of transistors, without affecting their ability to carry current.

Samsung’s production aims to supply some of the long-standing customers of the Asian group, including Apple and Qualcomm.